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Preliminary Datasheet
CR12CM-12B
Thyristor
Medium Power Use Features
IT (AV) : 12 A VDRM : 600 V IGT : 30 mA The product guaranteed maximum junction temperature of 150C Non-Insulated Type Planar Passivation Type R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
Outline
RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. Cathode Anode Gate Anode
3 1 12 3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V
R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
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CR12CM-12B
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Ratings 18.8 12 360 544 5 0.5 6 10 2 - 40 to +150 - 40 to +150 2.0 Unit A A A A2s W W V V A C C g Conditions
Preliminary
Commercial frequency, sine half wave Note2 180 conduction, Tc = 116C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Min. -- -- -- -- 0.2/0.1 -- -- -- Typ. -- -- -- -- -- -- 15 -- Max. 2.0/5.0 2.0/5.0 1.6 1.5 -- 30 -- 1.2 Unit mA mA V V V mA mA C/W Test conditions Tj = 125C/150C, VRRM applied Tj = 125C/150C, VDRM applied Tc = 25C, ITM = 40 A, instantaneous value Tj = 25C, VD = 6 V, IT = 1 A Tj = 125C/150C, VD = 1/2 VDRM Tj = 25C, VD = 6 V, IT = 1 A Tj = 25C, VD = 12 V Junction to caseNote1 Note2
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 2. Case temperature is measured at anode tab 1.5 mm away from the molded case.
R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
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CR12CM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
103 Tc = 25C
Rated Surge On-State Current
400
Surge On-State Current (A)
1.2 1.6 2.0 2.4 2.8 3.2
On-State Current (A)
320
102
240
160
101
80 0 100
100 0.8
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
102
PGM = 5 W
x 100 (%)
Gate Characteristics
Gate Trigger Current vs. Junction Temperature
103 Typical Example
Gate Voltage (V)
101
Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C)
VFGM = 6 V VGT = 1.5 V PG(AV) = 0.5 W
102
100
IGT = 30 mA
IFGM =2A
101
10-1
VGD = 0.1 V
10-2 101
102
103
104
100
-40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) Gate Trigger Voltage (Tj = 25C) x 100 (%)
Gate Trigger Voltage vs. Junction Temperature
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Transient Thermal Impedance (C/W)
103 Typical Example
101
102
100
101
10-1
100 -40
0
40
80
120
160
10-2 10-4
10-3
10-2
10-1
Junction Temperature (C)
Time (s)
R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
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CR12CM-12B
Preliminary
Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave)
160
Maximum Average Power Dissipation (Single-Phase Half Wave)
64
Average Power Dissipation (W)
56 48
360
Case Temperature (C)
140 120 90 60 180 120 100 80 60 40 20 = 30 60 120 90 180
360
Resistive, 40 inductive loads 32 24 16 6 0 0 4 8 12 = 30
Resistive, inductive loads
16
20
24
28
32
0
0
3
6
9
12
15
18
21
24
Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave)
160
Average On-State Current (A)
Maximum Average Power Dissipation (Single-Phase Full Wave)
64
Ambient Temperature (C)
140 120 100 80 60 40 20 0 0
Average Power Dissipation (W)
Resistive, inductive loads Natural convection
360
56 48 90 40 32 24 16 8 0 0 4 8 12 16 20 24

120 180 60 = 30
= 30 60 90
120 180
360
Resistive loads 28 32
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave)
160 160

Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave)
Ambient Temperature (C)
140
140 120 100 80 60 40 20 0
Case Temperature (C)
Resistive loads Natural convection
120 100 80 60 40 20 0 = 30 60 120 90 180
360
360
Resistive loads
180 120 = 30 60 90
0
4
8
12
16
20
24
28
32
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Average On-State Current (A)
R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
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CR12CM-12B
Preliminary
Allowable Case Temperature vs. Average On-State Current (Rectangular Wave)
160
Maximum Average Power Dissipation (Rectangular Wave)
64
Average Power Dissipation (W)
56 48
Case Temperature (C)
360
140 120 100 80 60 40 20 = 30 90 180 60 120 270 DC
360 Resistive, inductive loads
40 Resistive, inductive loads 180 270 32 120 90 DC 60 24 = 30 16 8 0 0 4 8 12 16 20 24 28 32
0
0
4
8
12
16
20
24
28
32
Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave)
Average On-State Current (A)
Breakover Voltage vs. Junction Temperature
x 100 (%)
160
103
Ambient Temperature (C)
140 120 100 80 60 40 20 0
Resistive, inductive loads Natural convection
Typical Example
360
DC 270 = 30 60 90 120 180
Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C)
102
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
101 -40
0
40
80
120
160
Average On-State Current (A)
Junction Temperature (C)
x 100 (%)
160 140 120 100 80 60 40 20 0 101 102 103 104 Typical Example Tj = 125C
x 100 (%)
Breakover Voltage vs. Rate of Rise of Off-State Voltage
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 140 120 100 80 60 40 20 0 101 102 103 104 Typical Example Tj = 150C
Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s)
Rate of Rise of Off-State Voltage (V/s)
Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s)
Rate of Rise of Off-State Voltage (V/s)
R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
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CR12CM-12B
Preliminary
Repetitive Peak Reverse Voltage vs. Junction Temperature Holding Current vs. Junction Temperature
x 100 (%)
x 100 (%)
160
103
Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C)
Typical Example
140 120 100 80 60 40 20 0 -40
Typical Example
Holding Current (Tj = tC) Holding Current (Tj = 25C)
102
0
40
80
120
160
101
0
40
80
120
160
Junction Temperature (C)
Junction Temperature (C)
Gate Trigger Current vs. Gate Current Pulse Width
x 100 (%)
103 Typical Example
Gate Trigger Current (tw) Gate Trigger Current (DC)
102
101 10-1
100
101
102
Gate Current Pulse Width (s)
R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
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CR12CM-12B
Preliminary
Package Dimensions
Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code T220AB MASS[Typ.] 2.0g
Unit: mm
10.5Max
4.5 1.3
3.2
16Max
3.8Max
1.0
12.5Min
0.8
7.0
3.6
2.54
2.54
0.5
2.6
Ordering Information
Orderable Part Number CR12CM-12B#B00 CR12CM-12B-A8#B00 Packing Bag Tube Quantity 100 pcs. 50 pcs. Remark Straight type A8 Lead form
Note : Please confirm the specification about the shipping in detail.
R07DS0232EJ0100 Rev.1.00 Dec 20, 2010
4.5Max
Page 7 of 7
Notice
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